基于带符号位的浮点数运算的多位宽3D RRAM设计

A Multi-Bit 3D RRAM-Based Signed Floating-Point Number Operations

  • 摘要: 本文介绍了卷积神经网络(convolutional neutral network,CNN)系统中具有多位存储的三维阻变式存储器(three-dimensional resistive random-access memory,3D RRAM)的带符号位的浮点数运算. 与其他类型存储器相比,3D RRAM可以在存储器内部进行运算,且具有更高的读取速率和更低的能耗,为解决冯诺依曼架构的瓶颈问题提供新方案. 单个RRAM单元的最大和最小电阻分别达到10 GΩ和10 MΩ,可在多级电阻状态下稳定,以存储多比特位宽的数据. 测试结果表明,带符号位的浮点数的卷积运算系统的精度可以达到99.8%,测试中3D RRAM模型的峰值读取速度为0.529 MHz.

     

    Abstract: In this paper, a signed floating-point number operation with multi-bit storage three-dimensional resistive random-access memory (3D RRAM) was presented for complex convolution neutral network (CNN) systems. Comparing with other types of memory, 3D RRAM can not only perform calculations inside the memory, but also possess a higher reading rate and a lower energy consumption, providing a new solution to the bottleneck problem of the Von Neumann architecture. A single RRAM cell can reach a maximum and minimum resistance of 10 GΩ and 10 MΩ, which can be stabilized in multi-level resistance states to store high-bit-width data. The test results show that, the accuracy of the signed floating-point number convolution operation system can reach up to 99.8%, the measured peak reading speed of the 3D RRAM model is 0.529 MHz.

     

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