铟锡氧化物导电玻璃上高氮含量氮化碳薄膜的电化学沉积及其性能研究

Electrodeposition of Carbon Nitride Thin Films Having High Nitrogen Content on Indium Tin Oxide Coated Glass

  • 摘要: 在铟锡氧化物导电玻璃基底上,采用二氰二胺(C2N4H4)的乙腈饱和溶液电化学沉积高氮含量的CNx薄膜.X射线光电子能谱(XPS)分析表明,薄膜主要由C,N组成,最高nN/nC=1.22(接近C3N4中氮与碳的化学计量数比1.33).傅里叶变换红外光谱(FTIR)分析表明碳和氮主要以C—N,CN的形式形成共价键.样品具有较宽的带隙,在50℃,1250V下得到的薄膜样品的光学能隙为2.32eV.实验结果表明,电压在1000~1300V、温度在30~50℃时能得到氮含量较高的薄膜.

     

    Abstract: Saturated solution of dicyandiamide in acetonitrile was selected as the electrolyte in an attempt to deposit carbon nitride films onto glass substrates coated with indium tin oxide (ITO-coated glass). The result of X-ray photoelectron spectroscopy (XPS) showed that the maximum value of the N/C atomic ratio in the films was 1.22, quite close to the stoichiometric value of C3N4. Fourier transform infrared (FTIR) spectroscopy supported the existence of C—N, (C)N covalent bonds. Optical band gap Eopt of CNx films determined by Tauc's relation was wide, and the Eopt of the sample obtained at 50 ℃, 1 250 V was 2.32 eV. It was found that carbon nitride films of high nitrogen content could be obtained under the conditions of voltages from (1 100 V) to (1 300 V) and temperatures from 30 ℃ to 50 ℃.

     

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