Abstract: Discusses the failure and factors of dependence of the conductivity of flexible ITO films under bending behaviors, as well as the effects of inorganic buffer layers, as SiO₂ and TiO₂, on the bending properties. The results and analysis show that the mismatch parameters, the adhesion and the defects are three main factors affecting the bending properties. The SiO₂ or TiO₂ buffer layer can decrease the critical radius of ITO thin films in inward-bending; and the TiO₂ buffer layer can improve the times of bending of ITO thin films.