In-Plane Transition-Metal Dichalcogenide Junction with Nearly Zero Interfacial Band Offset

TY - JOUR

T1 - In-Plane Transition-Metal Dichalcogenide Junction with Nearly Zero Interfacial Band Offset

AU - Zhang, Jinfeng

AU - Hu, Genyu

AU - Hu, Shihao

AU - Zhang, Yun

AU - Zhou, Weikang

AU - Yang, Lilin

AU - Xu, Ziqiang

AU - Qiao, Jingsi

AU - Li, Zhilin

AU - Gao, Hong Jun

AU - Wang, Yeliang

AU - Shao, Yan

AU - Wu, Xu

N1 - Publisher Copyright: © 2024 American Chemical Society.

PY - 2025/1/14

Y1 - 2025/1/14

N2 - Two-dimensional in-plane transition-metal dichalcogenide (TMD) junctions have a range of potential applications in next-generation electronic devices. However, limited by the difficulties in ion implantation on 2D systems, the fabrication of the in-plane TMD junctions still relies on the lateral epitaxy of different materials, which always induces lattice mismatch and interfacial scattering. Here, we report the in-plane TMD junction formed with monolayer (ML) PtTe2 at the boundary of ML and bilayer graphene on SiC. As the scanning tunneling microscopy/spectroscopy results revealed, the substrate screen effect is weak on ML PtTe2, compared to the nonlayered materials. At the interface of the junction, the atomic lattice is continuous, and a smooth type-II band alignment is formed with a near-zero band offset. The reported technique can be readily extended to other 2D semiconductors with strong interlayer coupling and is feasible for fabricating TMD junctions with promising interfacial electronic structures, aimed at device applications based on low-dimensional electronic behaviors.

AB - Two-dimensional in-plane transition-metal dichalcogenide (TMD) junctions have a range of potential applications in next-generation electronic devices. However, limited by the difficulties in ion implantation on 2D systems, the fabrication of the in-plane TMD junctions still relies on the lateral epitaxy of different materials, which always induces lattice mismatch and interfacial scattering. Here, we report the in-plane TMD junction formed with monolayer (ML) PtTe2 at the boundary of ML and bilayer graphene on SiC. As the scanning tunneling microscopy/spectroscopy results revealed, the substrate screen effect is weak on ML PtTe2, compared to the nonlayered materials. At the interface of the junction, the atomic lattice is continuous, and a smooth type-II band alignment is formed with a near-zero band offset. The reported technique can be readily extended to other 2D semiconductors with strong interlayer coupling and is feasible for fabricating TMD junctions with promising interfacial electronic structures, aimed at device applications based on low-dimensional electronic behaviors.

KW - PtTe

KW - band offset

KW - in-plane TMD junction

KW - scanning tunneling microscopy/spectroscopy

KW - strong interlayer coupling

UR - https://www.scopus.com/pages/publications/85215290669

U2 - 10.1021/acsnano.4c12092

DO - 10.1021/acsnano.4c12092

M3 - Article

C2 - 39810376

AN - SCOPUS:85215290669

SN - 1936-0851

VL - 19

SP - 803

EP - 810

JO - ACS Nano

JF - ACS Nano

IS - 1

ER -