!!Research output per year
!!Research output per year
指纹图谱
深入探索 Fei Mo 活跃其中的研究主题。这些主题标签来自该研究者的学术成果，它们共同构成了一个独特的学术指纹.
- 6 相似学者
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Simulation study of IGZO (with CuOx)/Si Complementary Ferroelectric FET (CFeFET) for Multi-bit Content Addressable Memory
Guo, Z., Yang, G., Mo, F. & Wang, Y., 2026, 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026. Institute of Electrical and Electronics Engineers Inc., (10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026).科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审
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A Physics-Based Compact Model for IGZO Channel FET Toward Subthreshold Characteristic Dependent Memory Application
Wang, X., Chen, K., Li, Y., Qiao, J., Ma, Y., Jin, C., Wu, J., Chen, J., Kobayashi, M., Yang, G., Li, L., Mo, F. & Wang, Y., 2025, 在: IEEE Transactions on Electron Devices. 72, 5, 页码 2390-2398 9 页码科研成果: 期刊稿件 › 文章 › 同行评审
1 在新选项卡中打开链接 引用 （Scopus） -
Multiscale Simulation of the Impact of Defects on Elevated-Metal Metal-Oxide IGZO TFTs
Sun, C., Dou, X., Du, Z., Dong, H., Li, X., Sang, P., Zhan, X., Mo, F., Wu, J. & Chen, J., 2月 2025, 在: Micromachines. 16, 2, 141.科研成果: 期刊稿件 › 文章 › 同行评审
开放访问8 在新选项卡中打开链接 引用 （Scopus） -
A Simulation Comparison of Channel-All-Around and Gate-All-Around 3D Vertical Structure FeFET with IGZO Channel
Wang, X., Guo, Z., Li, Y., Jin, C., Wu, J., Yang, G., Ma, Y., Kobayashi, M., Mo, F. & Wang, Y., 2024, 2024 IEEE 17th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024. Ye, F., Zhu, X. & Tang, T. A. (编辑). Institute of Electrical and Electronics Engineers Inc., (2024 IEEE 17th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024).科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审
3 在新选项卡中打开链接 引用 （Scopus） -
A simulation study on memory characteristics of InGaZnO-channel ferroelectric FETs with 2D planar and 3D structures
Mo, F., Mei, X., Saraya, T., Hiramoto, T. & Kobayashi, M., 5月 2022, 在: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 61, SC, SC1013.科研成果: 期刊稿件 › 文章 › 同行评审
开放访问26 在新选项卡中打开链接 引用 （Scopus）