Enhanced Orbital Torque Efficiency and Magnetization Switching Through M (M = MgO, Gd, and Pt) Doping Ti Orbital Hall Channel for Efficient Orbitronic Devices

Yuhe Yang; Yifan Yang; Pengfei Liu; Delin Zhang; Ping Wang; Cheng Chen; Jinyu Duan; Peng Lu; Heshuang Wei; Wei Jiang; Wentao Hou; Jing Kong; Shuai Hu; Lishu Zhang; Liang Liu; Yue Li; Wenhong Wang; Yong Jiang

doi:10.1002/adfm.202505410

Enhanced Orbital Torque Efficiency and Magnetization Switching Through M (M = MgO, Gd, and Pt) Doping Ti Orbital Hall Channel for Efficient Orbitronic Devices

Yuhe Yang
, Yifan Yang
, Pengfei Liu
, Delin Zhang^*
, Ping Wang
, Cheng Chen
, Jinyu Duan
, Peng Lu
, Heshuang Wei
, Wei Jiang
, Wentao Hou
, Jing Kong
, Shuai Hu
, Lishu Zhang^*
, Liang Liu^*
, Yue Li
, Wenhong Wang
, Yong Jiang^*

^*Corresponding author for this work

Tiangong University
Shanghai Jiao Tong University
Beijing Institute of Technology
Shandong University

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The orbital Hall effect in materials with weakly spin-orbit coupling has attracted considerable interest for orbitronic applications due to its high efficiency, low cost, and environmental friendliness. Here, the enhanced orbital torque efficiency and magnetization switching of the Ti_1-XM_X (M = MgO, Gd, and Pt)/[Co/Pt]₄ structures are systematically investigated. The absolute value of the orbital torque efficiencies is significantly improved up to ≈0.23, ≈0.20, and ≈0.27 with MgO, Gd, and Pt dopants, respectively, compared to the Ti/[Co/Pt]₄ matrix structure (≈0.06). Furthermore, the high orbital torque efficiencies lower the critical switching current density of 1.9 × 10⁷ A cm⁻² for Ti/[Co/Pt]₄ to 3.6 × 10⁶, 4.0 × 10⁶, and 7.8 × 10⁶ A cm⁻² for Ti_1-XMgO_X/[Co/Pt]₄, Ti_1-XGd_X/[Co/Pt]₄, and Ti_1-XPt_X/[Co/Pt]₄ structures, respectively. The enhancement of orbital torque efficiency of Ti_1-XMgO_X/[Co/Pt]₄ heterostructures mainly originates from the improvement of the resistivity of Ti_1-XMgO_X, and for Ti_1-XGd_X/[Co/Pt]₄ and Ti_1-XPt_X/[Co/Pt]₄ heterostructures, it can be dominantly attributed to the improvements of orbital Hall conductivity of Ti_1-XGd_X and Ti_1-XPt_X, verified through the first-principles calculations. Our findings offer a promising approach for developing energy-efficient orbitronic devices.

Original language	English
Article number	e05410
Journal	Advanced Functional Materials
Volume	36
Issue number	12
DOIs	https://doi.org/10.1002/adfm.202505410
Publication status	Published - 9 Feb 2026
Externally published	Yes

Keywords

memory and logic devices
orbital Hall effect
orbitronics
spintronics

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10.1002/adfm.202505410

Cite this

Yang, Y., Yang, Y., Liu, P., Zhang, D., Wang, P., Chen, C., Duan, J., Lu, P., Wei, H., Jiang, W., Hou, W., Kong, J., Hu, S., Zhang, L., Liu, L., Li, Y., Wang, W., & Jiang, Y. (2026). Enhanced Orbital Torque Efficiency and Magnetization Switching Through M (M = MgO, Gd, and Pt) Doping Ti Orbital Hall Channel for Efficient Orbitronic Devices. Advanced Functional Materials, 36(12), Article e05410. https://doi.org/10.1002/adfm.202505410

@article{13e2c9f3456c4043a606b7610dbbf308,

title = "Enhanced Orbital Torque Efficiency and Magnetization Switching Through M (M = MgO, Gd, and Pt) Doping Ti Orbital Hall Channel for Efficient Orbitronic Devices",

abstract = "The orbital Hall effect in materials with weakly spin-orbit coupling has attracted considerable interest for orbitronic applications due to its high efficiency, low cost, and environmental friendliness. Here, the enhanced orbital torque efficiency and magnetization switching of the Ti1-XMX (M = MgO, Gd, and Pt)/[Co/Pt]4 structures are systematically investigated. The absolute value of the orbital torque efficiencies is significantly improved up to ≈0.23, ≈0.20, and ≈0.27 with MgO, Gd, and Pt dopants, respectively, compared to the Ti/[Co/Pt]4 matrix structure (≈0.06). Furthermore, the high orbital torque efficiencies lower the critical switching current density of 1.9 {\texttimes} 107 A cm−2 for Ti/[Co/Pt]4 to 3.6 {\texttimes} 106, 4.0 {\texttimes} 106, and 7.8 {\texttimes} 106 A cm−2 for Ti1-XMgOX/[Co/Pt]4, Ti1-XGdX/[Co/Pt]4, and Ti1-XPtX/[Co/Pt]4 structures, respectively. The enhancement of orbital torque efficiency of Ti1-XMgOX/[Co/Pt]4 heterostructures mainly originates from the improvement of the resistivity of Ti1-XMgOX, and for Ti1-XGdX/[Co/Pt]4 and Ti1-XPtX/[Co/Pt]4 heterostructures, it can be dominantly attributed to the improvements of orbital Hall conductivity of Ti1-XGdX and Ti1-XPtX, verified through the first-principles calculations. Our findings offer a promising approach for developing energy-efficient orbitronic devices.",

keywords = "memory and logic devices, orbital Hall effect, orbitronics, spintronics",

author = "Yuhe Yang and Yifan Yang and Pengfei Liu and Delin Zhang and Ping Wang and Cheng Chen and Jinyu Duan and Peng Lu and Heshuang Wei and Wei Jiang and Wentao Hou and Jing Kong and Shuai Hu and Lishu Zhang and Liang Liu and Yue Li and Wenhong Wang and Yong Jiang",

note = "Publisher Copyright: {\textcopyright} 2025 Wiley-VCH GmbH.",

year = "2026",

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day = "9",

doi = "10.1002/adfm.202505410",

language = "English",

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Yang, Y, Yang, Y, Liu, P, Zhang, D, Wang, P, Chen, C, Duan, J, Lu, P, Wei, H, Jiang, W, Hou, W, Kong, J, Hu, S, Zhang, L, Liu, L, Li, Y, Wang, W & Jiang, Y 2026, 'Enhanced Orbital Torque Efficiency and Magnetization Switching Through M (M = MgO, Gd, and Pt) Doping Ti Orbital Hall Channel for Efficient Orbitronic Devices', Advanced Functional Materials, vol. 36, no. 12, e05410. https://doi.org/10.1002/adfm.202505410

TY - JOUR

T1 - Enhanced Orbital Torque Efficiency and Magnetization Switching Through M (M = MgO, Gd, and Pt) Doping Ti Orbital Hall Channel for Efficient Orbitronic Devices

AU - Yang, Yuhe

AU - Yang, Yifan

AU - Liu, Pengfei

AU - Zhang, Delin

AU - Wang, Ping

AU - Chen, Cheng

AU - Duan, Jinyu

AU - Lu, Peng

AU - Wei, Heshuang

AU - Jiang, Wei

AU - Hou, Wentao

AU - Kong, Jing

AU - Hu, Shuai

AU - Zhang, Lishu

AU - Liu, Liang

AU - Li, Yue

AU - Wang, Wenhong

AU - Jiang, Yong

PY - 2026/2/9

Y1 - 2026/2/9

N2 - The orbital Hall effect in materials with weakly spin-orbit coupling has attracted considerable interest for orbitronic applications due to its high efficiency, low cost, and environmental friendliness. Here, the enhanced orbital torque efficiency and magnetization switching of the Ti1-XMX (M = MgO, Gd, and Pt)/[Co/Pt]4 structures are systematically investigated. The absolute value of the orbital torque efficiencies is significantly improved up to ≈0.23, ≈0.20, and ≈0.27 with MgO, Gd, and Pt dopants, respectively, compared to the Ti/[Co/Pt]4 matrix structure (≈0.06). Furthermore, the high orbital torque efficiencies lower the critical switching current density of 1.9 × 107 A cm−2 for Ti/[Co/Pt]4 to 3.6 × 106, 4.0 × 106, and 7.8 × 106 A cm−2 for Ti1-XMgOX/[Co/Pt]4, Ti1-XGdX/[Co/Pt]4, and Ti1-XPtX/[Co/Pt]4 structures, respectively. The enhancement of orbital torque efficiency of Ti1-XMgOX/[Co/Pt]4 heterostructures mainly originates from the improvement of the resistivity of Ti1-XMgOX, and for Ti1-XGdX/[Co/Pt]4 and Ti1-XPtX/[Co/Pt]4 heterostructures, it can be dominantly attributed to the improvements of orbital Hall conductivity of Ti1-XGdX and Ti1-XPtX, verified through the first-principles calculations. Our findings offer a promising approach for developing energy-efficient orbitronic devices.

AB - The orbital Hall effect in materials with weakly spin-orbit coupling has attracted considerable interest for orbitronic applications due to its high efficiency, low cost, and environmental friendliness. Here, the enhanced orbital torque efficiency and magnetization switching of the Ti1-XMX (M = MgO, Gd, and Pt)/[Co/Pt]4 structures are systematically investigated. The absolute value of the orbital torque efficiencies is significantly improved up to ≈0.23, ≈0.20, and ≈0.27 with MgO, Gd, and Pt dopants, respectively, compared to the Ti/[Co/Pt]4 matrix structure (≈0.06). Furthermore, the high orbital torque efficiencies lower the critical switching current density of 1.9 × 107 A cm−2 for Ti/[Co/Pt]4 to 3.6 × 106, 4.0 × 106, and 7.8 × 106 A cm−2 for Ti1-XMgOX/[Co/Pt]4, Ti1-XGdX/[Co/Pt]4, and Ti1-XPtX/[Co/Pt]4 structures, respectively. The enhancement of orbital torque efficiency of Ti1-XMgOX/[Co/Pt]4 heterostructures mainly originates from the improvement of the resistivity of Ti1-XMgOX, and for Ti1-XGdX/[Co/Pt]4 and Ti1-XPtX/[Co/Pt]4 heterostructures, it can be dominantly attributed to the improvements of orbital Hall conductivity of Ti1-XGdX and Ti1-XPtX, verified through the first-principles calculations. Our findings offer a promising approach for developing energy-efficient orbitronic devices.

KW - memory and logic devices

KW - orbital Hall effect

KW - orbitronics

KW - spintronics

UR - https://www.scopus.com/pages/publications/105015360800

U2 - 10.1002/adfm.202505410

DO - 10.1002/adfm.202505410

M3 - Article

AN - SCOPUS:105015360800

SN - 1616-301X

VL - 36

JO - Advanced Functional Materials

JF - Advanced Functional Materials

IS - 12

M1 - e05410

ER -

Enhanced Orbital Torque Efficiency and Magnetization Switching Through M (M = MgO, Gd, and Pt) Doping Ti Orbital Hall Channel for Efficient Orbitronic Devices

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