TY - JOUR
T1 - Enhanced Orbital Torque Efficiency and Magnetization Switching Through M (M = MgO, Gd, and Pt) Doping Ti Orbital Hall Channel for Efficient Orbitronic Devices
AU - Yang, Yuhe
AU - Yang, Yifan
AU - Liu, Pengfei
AU - Zhang, Delin
AU - Wang, Ping
AU - Chen, Cheng
AU - Duan, Jinyu
AU - Lu, Peng
AU - Wei, Heshuang
AU - Jiang, Wei
AU - Hou, Wentao
AU - Kong, Jing
AU - Hu, Shuai
AU - Zhang, Lishu
AU - Liu, Liang
AU - Li, Yue
AU - Wang, Wenhong
AU - Jiang, Yong
N1 - Publisher Copyright:
© 2025 Wiley-VCH GmbH.
PY - 2026/2/9
Y1 - 2026/2/9
N2 - The orbital Hall effect in materials with weakly spin-orbit coupling has attracted considerable interest for orbitronic applications due to its high efficiency, low cost, and environmental friendliness. Here, the enhanced orbital torque efficiency and magnetization switching of the Ti1-XMX (M = MgO, Gd, and Pt)/[Co/Pt]4 structures are systematically investigated. The absolute value of the orbital torque efficiencies is significantly improved up to ≈0.23, ≈0.20, and ≈0.27 with MgO, Gd, and Pt dopants, respectively, compared to the Ti/[Co/Pt]4 matrix structure (≈0.06). Furthermore, the high orbital torque efficiencies lower the critical switching current density of 1.9 × 107 A cm−2 for Ti/[Co/Pt]4 to 3.6 × 106, 4.0 × 106, and 7.8 × 106 A cm−2 for Ti1-XMgOX/[Co/Pt]4, Ti1-XGdX/[Co/Pt]4, and Ti1-XPtX/[Co/Pt]4 structures, respectively. The enhancement of orbital torque efficiency of Ti1-XMgOX/[Co/Pt]4 heterostructures mainly originates from the improvement of the resistivity of Ti1-XMgOX, and for Ti1-XGdX/[Co/Pt]4 and Ti1-XPtX/[Co/Pt]4 heterostructures, it can be dominantly attributed to the improvements of orbital Hall conductivity of Ti1-XGdX and Ti1-XPtX, verified through the first-principles calculations. Our findings offer a promising approach for developing energy-efficient orbitronic devices.
AB - The orbital Hall effect in materials with weakly spin-orbit coupling has attracted considerable interest for orbitronic applications due to its high efficiency, low cost, and environmental friendliness. Here, the enhanced orbital torque efficiency and magnetization switching of the Ti1-XMX (M = MgO, Gd, and Pt)/[Co/Pt]4 structures are systematically investigated. The absolute value of the orbital torque efficiencies is significantly improved up to ≈0.23, ≈0.20, and ≈0.27 with MgO, Gd, and Pt dopants, respectively, compared to the Ti/[Co/Pt]4 matrix structure (≈0.06). Furthermore, the high orbital torque efficiencies lower the critical switching current density of 1.9 × 107 A cm−2 for Ti/[Co/Pt]4 to 3.6 × 106, 4.0 × 106, and 7.8 × 106 A cm−2 for Ti1-XMgOX/[Co/Pt]4, Ti1-XGdX/[Co/Pt]4, and Ti1-XPtX/[Co/Pt]4 structures, respectively. The enhancement of orbital torque efficiency of Ti1-XMgOX/[Co/Pt]4 heterostructures mainly originates from the improvement of the resistivity of Ti1-XMgOX, and for Ti1-XGdX/[Co/Pt]4 and Ti1-XPtX/[Co/Pt]4 heterostructures, it can be dominantly attributed to the improvements of orbital Hall conductivity of Ti1-XGdX and Ti1-XPtX, verified through the first-principles calculations. Our findings offer a promising approach for developing energy-efficient orbitronic devices.
KW - memory and logic devices
KW - orbital Hall effect
KW - orbitronics
KW - spintronics
UR - https://www.scopus.com/pages/publications/105015360800
U2 - 10.1002/adfm.202505410
DO - 10.1002/adfm.202505410
M3 - Article
AN - SCOPUS:105015360800
SN - 1616-301X
VL - 36
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 12
M1 - e05410
ER -