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A 28-nm Hybrid-Domain Outer Product-Based Floating-Point SRAM Computing-in-Memory Macro With Logarithm Bit-Width Residual ADC for Edge AI

  • Yiyang Yuan
  • , Zhongyi Sun
  • , Yiming Yang
  • , Xinghua Wang*
  • , Xiaoran Li*
  • , Cailian Ma
  • , Qirui Chen
  • , Meini Tang
  • , Xi Wei
  • , Hao Wu
  • , Haitao Wang
  • , Qihao Liu
  • , Chengying Chen
  • , Jinshan Yue
  • , Pui In Mak
  • , Feng Zhang*
  • *此作品的通讯作者
  • CAS - Institute of Microelectronics
  • Beijing Institute of Technology
  • Shandong SinoChip Semiconductors Company Ltd.
  • Xiamen University of Technology
  • University of Macau

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

With increasingly sophisticated artificial intelligence (AI) applications, there is an escalating need for computing-in-memory (CIM) schemes to facilitate high-precision floating-point (FP) multiply accumulate (MAC) computing, while existing digital or analog CIM implementations exhibit inherent limitations when confronted with high-bit precision situations. Therefore, this work presents a hybrid-domain CIM macro to enhance the energy efficiency of FP CIM computation. This work employs: 1) a hybrid-domain CIM macro structure that fully utilizes the advantages of digital and analog CIM paradigms; 2) a logarithm bit-width zero-canceling residual analog-digital convertor (ADC) to minimize the ADC overhead and improve throughput; and 3) an outer product-based FP/INT CIM architecture to eliminate the need for a large fan-in multi-level adder tree and reduce the transmission delay. A fabricated 28-nm 192-Kb INT/FP CIM macro achieves maximum peak energy efficiency of 72.12 TFLOPS/W and maximum area efficiency of 2.21 TFLOPS/mm2. The accuracy loss of running ResNet-18 on the CIFAR-100 dataset with BF16IN-BF16W-BF16OUT is 0.05%.

源语言英语
页(从-至)4450-4462
页数13
期刊IEEE Journal of Solid-State Circuits
卷61
期8
DOI
出版状态已出版 - 1 8月 2026
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